Photoluminescence properties of rare-earth doped Si-based materials
The photoluminescence (PL) spectra at room temperature for the silicon-based samples doped by Nd by ion implantation are measured. The results show that all the samples possess blue-violet photoluminescence properties under the ultraviolet light excitation and its light emission is stable. The intensity of PL spectra is closely relative to the dose of implantation and to the temperature of thermal annealing.The above samples were treated by anodization method. The PL spectra of porous samples which were treated by HNO3 were measured.The results show light emission efficiency of the porous samples that were treated by electro-chemical anodization etch and HNO3 is higher than those of ordinary PS samples under the same measuring conditions.
Nd doped porous treaded by acid photoluminescence
WANG ,Qingnian YUAN, Meiling LENG ,Xinli
Department of Communication and Engineering,Nanchang University ,Nanchang 330031,JiangXi,PRC; Department of Physics ,Nanchang University ,Nanchang ,330031 ,JiangXi,PRC; Department of Physics ,Nanchang University ,Nanchang ,330031 ,JiangXi,PRC
国际会议
2008亚太光通信会议(Asia-Pacific Optical Communications 2008)
杭州
英文
2008-10-26（万方平台首次上网日期，不代表论文的发表时间）