Reactive ion etching of ZnO using the H2/CH4 and H2/CH4/Ar mixtures

摘要：

This work investigates the reactive ions etching (RIE) physical properties of n-type ZnO using H2/CH4 and H2/CH4/Ar mixtures by varying the gas flow ratio, the radio-frequency (rf) plasma power and the chamber pressure. Atomic force microscopy (AFM) results and surface topographies are discussed. Although the etching rate of the n-ZnO at an H2/CH4 flow rate of 100/0 sccm, a work pressure of 100 mTorr and an rf power of 300 W is lower than under any other conditions, the rms roughness of 43.78 nm is the highest, and supports the application of roughened transparent contact layer (TCL) in light-emitting diodes (LEDs). The dynamics associated with the high etching rate were highly efficient at an H2/CH4/Ar flow rate of 38/5/57 sccm, a work pressure of 150 mTorr and an rf power of 300 W. In addition, the ZnO with thermal annealing were studied. The slower etching rate of annealed n-ZnO is observed due to an increase the crystal quality of the ZnO films after thermal annealing which consists with the x-ray diffraction (XRD) results.

关键词： ZnO dry etching reactive ions etching roughness

作者: Kuang-Po Hsueh Ren-Jie Hou Cheng-Huang Kuo Chun-Ju Tun

作者单位: Dept.of Electronic Engineering,Vanung University,Chung-Li 32061,Taiwan,R.O.C.; Dept.of Electrical Engineering,National Central University,Chung-Li 32001,Taiwan,R.O.C.; Dept.of Optics and Photonics,National Central University,Chung-Li 32001,Taiwan,R.O.C.

会议类型: 国际会议

会议名称: 2008亚太光通信会议(Asia-Pacific Optical Communications 2008)

会议地点: 杭州

会议语种:英文

在线出版日期: 2008-10-26（万方平台首次上网日期，不代表论文的发表时间）