A strained InGaAs/InAlAs coupled quantum well with polarization-independent large positive electro-refractive index change

摘要：

By analyzing the ground eigenstates of an InGaAs/InAlAs symmetric coupled quantum well for zero applied electric field and their changes along with an applied electric field, we find its advantages and disadvantages when it is applied to optical switching device. Hence a novel coupled quantum well structure is put forward. To obtain polarization independence, a tensile strain is applied to the quantum well layer. In the case of low applied electric field (F=15 kV/cm) and low absorption loss (for TE mode,メ=55.56cm-1; for TM mode, メ=75.58cm-1), a polarization-independent large electric-field-induced refractive index change (for TE mode, n=0.0108; for TM mode, n=0.0107) is obtained in the optimized InGaAs/InAlAs coupled quantum well structure at operating wavelength (ル=1550nm). The large refractive index change obtained with the optimized InGaAs/InAlAs coupled quantum well under so low absorption loss and applied electric field is very attractive for the semiconductor optical switch device. This manifests the optimized coupled quantum well structure has a great potential for application to ultra-fast and low-voltage optical switches and traveling wave modulators.

关键词： coupled quantum well electric induced refractive index change absorption loss optical switches.

作者: Zhixin Xu

作者单位: School of Science,Zhejiang University of Science and Technology,Hangzhou ,China,310023

会议类型: 国际会议

会议名称: 2008亚太光通信会议(Asia-Pacific Optical Communications 2008)

会议地点: 杭州

会议语种:英文

在线出版日期: 2008-10-26（万方平台首次上网日期，不代表论文的发表时间）