Optimum Design of Multi-finger SiGe HBT with Non-uniform Length for Power Application

摘要：

With a three-dimensional thermal-electrical model,a non-uniform emitter length structure in multi-finger SiGe heterojunction bipolar transistors (HBTs) is presented to improve thermal stability.Compared with the traditional uniform emitter length design,the peak temperature of multifinger SiGe HBT with non-uniform length is lowered.Therefore,it can operate at large current and has a higher power handling capability in power application.

作者: Hu Ning Zhang Wan-rong Jin Dong-Yue Xie Hong-Yun Huang Lu Huang Yi-Wen Shen Pei Li Jia Gan Jun Ning

作者单位: College of Electronic Information and Control EngineeringBeijing University of TechnologyBeijing 100 College of Electronic Information and Control Engineering;Beijing University of Technology Beijing 1

会议类型: 国际会议

会议名称: 第八届电磁理论、天线及传播国际研讨会

会议地点: 昆明

会议语种:英文

在线出版日期: 2008-11-01（万方平台首次上网日期，不代表论文的发表时间）