Design and Performance of CPW and CPW Bandpass Filter on SOI Substrate

摘要：

SOI technology gets more and more interests in RF ICs for its low loss,low crosstalk and other excellent electromagnetic properties.Well-behaved passive devices on SOI substrate will contribute a lot to the entire performance of RF ICs.In this paper,the influence of SOI parameters on transmission characteristics of coplanar waveguide (CPW) is researched by HFSS simulation.Based on the fine performance of a 50 CPW fabricated on an available SOI substrate,a dual-termination coupled Ka band bandpass filter (BPF) has been designed and fabricated.It shows -4.23dB insertion loss at peak transmission of about 32GHz.The CPW and BPF realized on SOI gain close characteristics respectively to the same structure on high resistivity (p≥1000Ω·cm) silicon substrate.SOI shows great potential to be the substrate of RF IC.

作者: Xi Li Yanling Shi Dawei Chen Yanfang Ding Qirong Xiao Hongbo Ye Hao Huang

作者单位: Department of E.E.,East China Normal University,Shanghai 200062,China Shanghai IC Research and Development Center,Shanghai 201203,China

会议类型: 国际会议

会议名称: 第八届电磁理论、天线及传播国际研讨会

会议地点: 昆明

会议语种:英文

在线出版日期: 2008-11-01（万方平台首次上网日期，不代表论文的发表时间）