Design and Analysis of a Highly Integrated CMOS Power Amplifier for RFID Reader
In order to implement a fully-integrated on-chip CMOS power amplifier (PA) for RFID reader, inductors are implemented by bonding wires in the output stage of PA. Comparing with the on-chip inductors in CMOS process, the merit of the bondwire inductor is its high quality factor, leading a higher output power and power efficiency. Also the disadvantage of bondwire inductor is analysed. The fully onchip class-E PA is implemented in 0.18-um CMOS process. It can provide the maximum output power of 20dBm and a 1dB output power of 14.5dBm. The maximum power-added efficiency (PAE) is 32.1％. After analyzing the matching networks in PA, the improvement methods are proposed to eliminate the shortcomings.
CMOS power amplifier bonding wires
Gao Tongqiang Chi Baoyong Zhang Chun Wang Zhihua
Department of Electronic Engineering Tsinghua University Beijing,China Institute of Microelectronics Tsinghua University Beijing,China
国际会议
广州
英文
2008-11-19（万方平台首次上网日期，不代表论文的发表时间）