Study of Damage Mechanism of High Power Microwave on Electronic Equipments

摘要：

Currently,damage effect of high power microwave(HPM) on electronic equipments is of increasing interest.HPMcan disturb,damage,or destroy many military or civilelectronic equipments.In this paper,the representative HPMwaveform is investigated in time and frequency fieldrespectively,and the main characteristics (peak power,risetime,power density,etc) are analyzed and listed.HPMgeneration devices and radiation are also discussed.Couplingenergy into electronic devices via front door and back door,asa function of coupling coefficient and the effective area,ismodeled.By presenting lots of kinds of coupling modes andpaths,damage effects are divided into five different classes,and damage mechanism of HPM on electronic equipments isproven in the paper.

关键词： HPM damage mechanism coupling mode electronic equipment

作者: Xiao Jinshi Liu Wenhua Zhang Shiying Zhang Jinhua Xing Changfeng

作者单位: College of Electronic Engineering,Naval University of Engineering,Wuhan 430033,China Naval Equipment Academe,Beijing 100032,China

会议类型: 国际会议

会议名称: 2008 China-Japan Joint Microwave Conference(2008年中日微波会议)

会议地点: 上海

会议语种:英文

页码: 454-457

在线出版日期: 2008-09-10（万方平台首次上网日期，不代表论文的发表时间）