Development of High-Power SiC MESFETs for Microwave Applications

摘要：

SiC MESFETs were fabricated using in-house grown epitaxial structures on semi-insulating 4H-SiC substrates.Field-plate technique was used to enhance power performance.DC and small-signal characteristics were measured for small gate-periphery devices. Packaged 20-ram SiC MESFET transistors were demonstrated with a saturated power 80 W and 44％ drain efficiency with the pulsed condition at a duty cycle of 10％ and 300 μsec pulse width.A SiC MESFET amplifier was developed for S-band operations consisting of internally partial-matched SiC MESFETs. The amplifier delivered a peak power of 280 W under pulsed operation with 8.6 dB power gain at 2 GHz and 65 V drain voltage.

作者: Song Bai Peng Wu Gang Chen Zhong Feng Zheyang Li Chuan Lin Youquan Jiang Chen Chen Kai Shao

作者单位: National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing Electronic Devices Ins National Key Laboratory of Monolithic ntegrated Circuits and Modules,Nanjing Electronic Devices Inst National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing Electronic Devices Ins

会议类型: 国际会议

会议名称: 2008 International Conference on Microwave and Millimeter Wave Technology(2008国际微波毫米波技术会议)

会议地点: 南京

会议语种:英文

页码: 2032-2035

在线出版日期: 2008-04-21（万方平台首次上网日期，不代表论文的发表时间）