Millimeter wave Properties of Photo-Illuminated Double Drift Indium Phosphide IMPATTs at Elevated Temperature

摘要：

The millimeter-wave properties of Double Drift Region (p+p n n+ type) InP IMPATT diodes are studied for the first time at elevated junction temperature. The study indicates that the device is capable of generating a CW power of 427.0 mW and 358.4 mW at 95 GHz and 145 GHz frequencies respectively.The effects of optical-illumination on the high frequency properties of the device are investigated through a simulation technique. The study reveals that the photo-generated leakage current reduces the RF power output and negative resistance of the devices along with an upward shift of operating frequency.The effect of illumination on the millimeter-wave properties of the diode is found to be more pronounced at higher window frequency (140 GHz) than at lower window frequency (94 GHz).

作者: M.Mukherjee J.Mukhopadhyay J.P.Banerjee S.K.Roy

作者单位: Centre of Millimeter wave Semiconductor Devices and Systems,Centre of Advanced Study in Radiophysics Rabindra Mahavidyalaya,Champadanga,Hooghly- 712 401,University of Burdwan,West Bengal,India

会议类型: 国际会议

会议名称: 2008 International Conference on Microwave and Millimeter Wave Technology(2008国际微波毫米波技术会议)

会议地点: 南京

会议语种:英文

页码: 1802-1805

在线出版日期: 2008-04-21（万方平台首次上网日期，不代表论文的发表时间）