Analysis of the Thermal effects of GaAs FETs under the High-power Electromagnetic Pulses

摘要：

In this paper,the transient thermal characteristics of GaAs field-effect transistors (FETs)Inthe presence of high-power electromagnetic pulses (HP-EMP) are investigated. By hybrid finite element methods which combining element-by-element finite element method (EBE-FEM) with the preconditioned conjugate gradient (PCG) technique,transient thermal responses including the maximum channel temperature of GaAs FETs and the maximum input power density of the thermal sources are extracted which will be useful for further taking thermal protection so as to prevent on-chip device breakdown from the attack of a HP-EMP.

关键词： High-power electromagnetic pulse (HP-EMP) GaAs field-effect transistors (FETs) breakdown, FEM

作者: Jianfeng Xu Wen-Yan Yin Jun-Fa Mao Le-Wei Li James L.Drewniak

作者单位: Center for Microwave and RF Technologies,School of Electronic Information and Electrical Engineering EMC lab,Missouri University of Science and Technology,MO 65409,USA

会议类型: 国际会议

会议名称: 2008 International Conference on Microwave and Millimeter Wave Technology(2008国际微波毫米波技术会议)

会议地点: 南京

会议语种:英文

页码: 1431-1434

在线出版日期: 2008-04-21（万方平台首次上网日期，不代表论文的发表时间）