Wideband On-chip RF MEMS Switches In A BiCMOS Technology For 60 GHz Applications
In this paper,an on-chip RF MEMS capacitive switch is designed and simulated with a 0.13 μm IBM SiGe BiCMOS technology for the first time. Mechanical and electrical design of the high frequency switch are discussed in this paper.Special consideration to improve Con/Coff ratio of the switch is used with multi metal layers configuration. The switch is designed for 60 GHz wireless applications,the results show that the switch has the insertion loss is less than 0.2 dB when the switch is off,while the isolation loss is larger than 15 dB when the switch is on over the frequency from 40 to 70 GHz. The calculated pull-in voltage of the switch is only about 10 volts,the switch is compact comparing with the reported PIN diode RF switch and has the membrane dimension of 10 μm×240 μm.
RF MEMS switch BiCMOS technology Silicon-Germanium Distributed passives 60 GHz Millimeter wave components
Guoan Wang Hanyi Ding Wayne Woods Essam Mina
IBM System and Technology Group,1000 River Street,Essex Junction,VT 05452
国际会议
2008 International Conference on Microwave and Millimeter Wave Technology(2008国际微波毫米波技术会议)
南京
英文
1389-1392
2008-04-21（万方平台首次上网日期，不代表论文的发表时间）