An Ultra-Wideband Darlington Low Noise Amplifier Design Based on SiGe HBT
A design methodology of Darlington low noise figure(LNA) for application at ultra wide bandwidth using a resistive feedback scheme is proposed. The packaged SiGe heterojunction bipolar transistors(HBTs) BFP740 and chip type passive components were used for this direct-coupled LNA. The Darlington amplifier has high gain of 20 dB with variation of 0.5dB over 3.1-6GHz,which is twice of single stage LNA. The typical noise figure is 1.8dB at 3.1Gllz,2.9dB at 6GHz and the circuit keeps unconditional stable for whole 3.1GHz-6GHz frequency band. Gencral design procedures are also given in this paper in order to better understand the roles of the various key issues for the LNA.
SHEN Pei ZHANG Wan-rong XIE Hong-yun JIN Dong-yue ZHANG Wei LI Jia GAN Jun-ning
School of Electronic Information and Control Engineering,Beijing University of Technology,Beijing,100022,China
国际会议
2008 International Conference on Microwave and Millimeter Wave Technology(2008国际微波毫米波技术会议)
南京
英文
1372-1375
2008-04-21（万方平台首次上网日期，不代表论文的发表时间）