6H-SiC lateral Power MOSFETs with an Asymmetrical Buried Oxide Double Step Structure

摘要：

A novel 6H-SiC lateral power MOSFET structure has been proposed with asymmetrical buried oxide double step which improves breakdown voltage. Extra step introducedInthe buried oxide enhances peak electric field and is positionedInthe middle of the drift region to maximum breakdown voltage. Using thin-film layer on top of the buried oxide,facilitates employment of high impurity concentration and results inreduction of on-resistance. The doping concentration of drift region ,height of step in buried oxide and difference in the thicknesses of buried oxides have been optimized by using device simulation ,to reduce the surface electric field crowding. While lateral power MOSFETs with asymmetrical buried oxide double step structure fabricated on SOI substrate exhibit a maximum breakdown voltage of 245 V with doping concentration of 3.5×1016cm-3 indrift region ,a 6H-SiC lateral MOSFETs show a characteristic breakdown voltage of 2015 V with doping concentration 1.2× 1017 cm-3 in the drift region.

作者: Samaneh Sharbati Ali A.Orouji M.Fathipour

作者单位: Department of Electrical Engineering,Semnan University,Semnan,IRAN Department of Electrical Engineering,Tehran University,Tehran,IRAN

会议类型: 国际会议

会议名称: 2008 International Conference on Microwave and Millimeter Wave Technology(2008国际微波毫米波技术会议)

会议地点: 南京

会议语种:英文

页码: 1359-1362

在线出版日期: 2008-04-21（万方平台首次上网日期，不代表论文的发表时间）