Microwave Modeling and Parameter Extraction Method for PHEMT

摘要：

This paper reviews the characterization technique of pseudomorphie high electron mobility transistors (PHEMT).The linear,nonlinear and noise modeling and corresponding parameter extraction methods are described. The on wafer measurement methods for S parameters and noise parameters are also highlighted.

作者: Jianjun Gao Xiuping Li

作者单位: School of information science and technology,East China Normal University,Shanghai,200062,P.R.China Department of Telecommunication Engineering Beijing University of Posts and Telecommunications 10087

会议类型: 国际会议

会议名称: 2008 International Conference on Microwave and Millimeter Wave Technology(2008国际微波毫米波技术会议)

会议地点: 南京

会议语种:英文

页码: 1323-1326

在线出版日期: 2008-04-21（万方平台首次上网日期，不代表论文的发表时间）