Modeling of High Power 0.3 THz IMPATT Oscillator Based on 3C-SiC and Growth of 3C-SiC on Si (100) Substrate for Possible IMPATT Fabrication
The Single Drift Region ( SDR,p+ n n+ type) cubic silicon carbide (3C-SiC/β-SiC) based IMPATT diode is designed and studied for the first time at terahertz (THz) frequency region.The simulation predicts that the device is capable of generating output RF power of 63.0 W with 13％ efficiency at 0.330 THz.The effect of parasitic series resistance on the RF power level of the device is further simulated. The presence of series resistance (2.5 Ω) reduces RF power output by 8.7％. The simulation clearly establishes the application possibility of 3C-SiC as a base material for high power THz IMPATT device. Single crystalline,epitaxial 3C-SiC films are deposited on silicon (Si) (100)substrates by rapid thermal chemical vapour deposition (RTPCVD) at a temperature as low as 800～C using a single precursor methylsilane,which contains Si and C atomsInthe same molecule. No initial surface carbonization step is required in this method.A p-n junction has been grown successfully and the characterization of the grown 3C-SiC film is reportedIn This paper.
Moumita Mukherjee Nilratan Mazumder
Institute of Radiophysics and Electronics,University of Calcutta,1,Girish Vidyaratna Lane,Kolkata 70 International Institute of Information Technology,X-1,8/3,Block EP,Sector V,Salt Lake Electronics Co
国际会议
2008 International Conference on Microwave and Millimeter Wave Technology(2008国际微波毫米波技术会议)
南京
英文
897-900
2008-04-21（万方平台首次上网日期，不代表论文的发表时间）