会议专题

Analysis of Pulsed/-V Curves and Power Slump in Field-Plate GaN-Based FETs

Two-dimensional transient analyses of GaN MESFETs and AIGaN/GaN HEMTs are performedInwhich a deep donor andA deep acceptor are considered in a buffer layer,and pulsed I-V curves are derived from them. It is studied how the existence of field plate affects buffer-related lag phenomena and power slump. It is shown thatInboth FETs,the power slump could be reduced by introducing a field plate,because electron injection into the buffer layer is weakened by it. The dependence on insulator-thickness under the field plate is also studied,suggesting that there is an optimum thickness of insulator to minimize the power slump.

K.Horio K.Itagaki A.Nakajima

Faculty of Systems Engineering,Shibaura Institute of Technology 307 Fukasak-u,Minuma-ku,Saitama 337-8570,Japan

国际会议

2008 International Conference on Microwave and Millimeter Wave Technology(2008国际微波毫米波技术会议)

南京

英文

893-896

2008-04-21(万方平台首次上网日期,不代表论文的发表时间)