Analysis of Pulsed/-V Curves and Power Slump in Field-Plate GaN-Based FETs

摘要：

Two-dimensional transient analyses of GaN MESFETs and AIGaN/GaN HEMTs are performedInwhich a deep donor andA deep acceptor are considered in a buffer layer,and pulsed I-V curves are derived from them. It is studied how the existence of field plate affects buffer-related lag phenomena and power slump. It is shown thatInboth FETs,the power slump could be reduced by introducing a field plate,because electron injection into the buffer layer is weakened by it. The dependence on insulator-thickness under the field plate is also studied,suggesting that there is an optimum thickness of insulator to minimize the power slump.

作者: K.Horio K.Itagaki A.Nakajima

作者单位: Faculty of Systems Engineering,Shibaura Institute of Technology 307 Fukasak-u,Minuma-ku,Saitama 337-8570,Japan

会议类型: 国际会议

会议名称: 2008 International Conference on Microwave and Millimeter Wave Technology(2008国际微波毫米波技术会议)

会议地点: 南京

会议语种:英文

页码: 893-896

在线出版日期: 2008-04-21（万方平台首次上网日期，不代表论文的发表时间）