A design procedure for tunnel diode microwave oscillators
Negative differential resistance (NDR) devices such as Esaki tunnel diodes or resonant tunnelling diodes are ideal for the realisation of high frequency oscillators. However,the oscillation frequency cannot usually be predicted precisely and the output power is quite weak.In This paper,a tunnel diode oscillator topology to which the conventional negative resistance oscillator methodology can be employed is shown to yield predictable oscillation frequencies,delivering the maximum possible output power. Methods for DC and RF characterization of NDR devices are also described.
Liquan Wang Edward Wasige
Ultrafast Systems Group,Nanoelectronics Research centre University of Glasgow
国际会议
2008 International Conference on Microwave and Millimeter Wave Technology(2008国际微波毫米波技术会议)
南京
英文
832-834
2008-04-21（万方平台首次上网日期，不代表论文的发表时间）