A Self-Aligned InP/InGaAs/InP DHBT with Hexagonal-Shaped Emitters

摘要：

InP/InGaAs/lnP double heteroj unction bipolar transistors(DHBTs) have been successfully fabricated using self-aligned process with hexagonal-shaped emitters. DHBTs with dimensions of 1×10μm have demonstrated a peak cutoff frequency fT of 170GHz. Typical BVCEO exceeds 8V.

作者: Yan Zhao Zheng Zhang Jianfeng Gao

作者单位: National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing Electronic Devices Institute,210016

会议类型: 国际会议

会议名称: 2008 International Conference on Microwave and Millimeter Wave Technology(2008国际微波毫米波技术会议)

会议地点: 南京

会议语种:英文

页码: 551-553

在线出版日期: 2008-04-21（万方平台首次上网日期，不代表论文的发表时间）