High-Efficiency Doherty Amplifier Using GaN HEMT Class-F Cells for WCDMA Applications
This paper presents a high-efficiency GaN high electron mobility transistor (HEMT) class-F Doherty amplifier(CFDA) for wide-band code division multiple access (WCDMA)applications. The class-F power amplifiers (PAs) with significant harmonic suppression are used as the carrier and peaking cells.For validations,the class-F PA is designed and implemented with 25-W GaN HEMT at 2.14 GHz. From the measured results forA single tone,the implemented class-F PA shows the peak poweradded efficiency (PAE) and drain efficiency of 72.2％ and 75.8％withA gain of 13.2 dB at an output power of 43.2 dBm by suppressing harmonic power levels below -55 dBc. For the proposed CFDA,the PAE and drain efficiency of 56.3％ and 60.1％ is achieved at 39.5 dBm (6-dB back-off power from Psat)forA single tone. ForA one-carrier WCDMA signal,the CFDA shows the PAE of 44.9％ with an adjacent channel leakage ratio (ACLR) of -22.1 dBc (+2.5 MHz offset) at 36.5 dBm,while an ACLR of -35.4 dBc with the PAE of 39.7％ is achieved for the CEDA after linearity optimization.
Yong-Sub Lee Mun-Woo Yoon-Ha Jeong
Department of electronic and electrical engineering,Pohang University of Science and Technology LG 220,San 31,Hyoja-Dong,Nam-Gu,Pohang 790-784,Gyungbuk,Republic of Korea
国际会议
2008 International Conference on Microwave and Millimeter Wave Technology(2008国际微波毫米波技术会议)
南京
英文
270-273
2008-04-21（万方平台首次上网日期，不代表论文的发表时间）