Characterization of a Cryogenically Cooled Silicon Germanium HBT Amplifier

摘要：

In This paper,the gain and noise performances of a DC-6GHz microwave amplifier using commercial Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT)are investigated at different bath temperatures. At room temperature,the two-stage amplifier hasA gain of 21dB andA noise figure of 3.7dB at 2.62GHz. When cooled to 70K,it demonstrates 27dB gain and 1.5dB noise figure at the same frequency. The gain and noise figure of another three-stage amplifier at room temperature are 34.5dB,3.7dB at 2.64GHz,respectively. When cooled to 130K,the gain goes up to 37.5dB;when cooled to 170K,the noise figure goes down to 2.4dB. The higher gain and better noise figure ofThis amplifier are obtained when the ambient temperature decreases.

关键词： microwave amplifier gain noise cryogenicallycooled

作者: A.Q.Cao K.Liu S.H.Chen S.C.Shi

作者单位: Purple Mountain Observatory,NAOC,CAS,China Graduate School of Chinese Academy of Sciences,CAS,China Purple Mountain Observatory,NAOC,CAS,China

会议类型: 国际会议

会议名称: 2008 International Conference on Microwave and Millimeter Wave Technology(2008国际微波毫米波技术会议)

会议地点: 南京

会议语种:英文

页码: 237-240

在线出版日期: 2008-04-21（万方平台首次上网日期，不代表论文的发表时间）