The Design of SiGe HBT Balanced Broadband Low Noise Amplifier

摘要：

A balanced-broadband low noise amplifier(LNA) was designed with the FR4 substrate,using packaged SiGe HBTs BFP640 and chip type passive components. The design principle and technology features of the structure of the balanced LNA were described. The computer simulated results indicate that this SiGe balanced LNA has the advantages of the noise figure less than 0.9dB over 0.8GHz to 1.7 GHz range,the high gain of 37dB,the input and output reflected coefficients are all less than -50dB.

关键词： SiGe HBT Broadband Low NoiseAmplifier

作者: Wang Zi-xu Yang Wei-ming Peng Ju-hong Chen Jian-xin Xie Wan-bo Shi Chen

作者单位: School of Physics and Electronic Technology,Hubei University,the Key Lab on Ferroelectric & Piezoele Beijing Optoelectronics Technology Laboratory,Beijing University of Technology,Beijing 100022,ER.CHN

会议类型: 国际会议

会议名称: 2008 International Conference on Microwave and Millimeter Wave Technology(2008国际微波毫米波技术会议)

会议地点: 南京

会议语种:英文

页码: 233-236

在线出版日期: 2008-04-21（万方平台首次上网日期，不代表论文的发表时间）