Thermal Stability of the Power SiGe HBT with Nonuniform Finger Length
A 20-finger power SiGe heterojunction bipolar transistor (HBT) with non-uniform emitter finger length is fabricated to improve the thermal stability. For comparison,a SiGe HBT with traditional uniform emitter finger length is also fabricated. The thermal resistance (Rth) and the regression loci of two types of HBTs at different biases are measured and compared.Experimental results show that the thermal stability of the HBT with non-uniform emitter finger length is always superior to that of the uniform one overA wide biasing range. The ability to improve Rth is strengthened from low to high collector current. At the same time,the power level for thermal regression is increases by 48.1％.Furthermore,the measurements of two-dimensional temperatureprofiles in two types of HBTs are performed to directly prove the improvement of the thermal stability and the peak temperature inthe device with non-uniform finger length. Because of the decrease in peak temperature and the improvement of thermal stability,power SiGe HBT with non-uniform finer length can operate at higher bias and hence has higher power handling capability.
Jin Dongyue Zhang Wanrong Shen Pei Xie Hongyun Li Jia Gan Junning Huang Lu Hu Ning Huang Yiwen
College of Electronic Information and Control Engineering Beijing University of Technology Beijing,100022,China
国际会议
2008 International Conference on Microwave and Millimeter Wave Technology(2008国际微波毫米波技术会议)
南京
英文
166-169
2008-04-21（万方平台首次上网日期，不代表论文的发表时间）