Performance of Capless Self-aligned Gate D- and QE-mode p-HEMTs

摘要：

Characteristics of 0.2 pm depletion mode (D) and quasi-enhancement mode (QE) capless InAIAs/InGaAs p-HEMTs having a self-aligned gate (SAG) are reported. The QE SAG capless p-HEMT showed improved output conductance and subthreshold characteristics due to the increased gate-to-channel aspect ratio implemented by usingA buried Pt technology. The maximum gin,IoN/IoFF,sub-threshold slope,fT,and fmax of the QE SAG capless p-HEMT were 1.22 S/mm,2.11×105,65 mV/dec,210 GHz,and 250 GHz and those of the D SAG capless p-HEMT were 1.12 S/ram,1.27×104,78 mV/dec,185 GHz,and 225 GHz,respectively. The QE SAG capless p-HEMT also exhibited a shorter drain delay time than the D SAG capless p-HEMT by about 46 ％.

作者: Tae-Woo Kim Jang-Soo Chun Chul-Seung Park Woo-Keun Song Jong-In Song

作者单位: Gwangju Institute of Science and Technology (GIST),Gwangju,Korea

会议类型: 国际会议

会议名称: 2008 International Conference on Microwave and Millimeter Wave Technology(2008国际微波毫米波技术会议)

会议地点: 南京

会议语种:英文

页码: 163-165

在线出版日期: 2008-04-21（万方平台首次上网日期，不代表论文的发表时间）