A Novel 0.15-μm High-Aspect-Ratio T-shaped Gate Fabrication Process Using a 248nm DUV Stepper

摘要：

A 0.15μm GaAs-based PHEMT process on 100ram wafers using 248nm stepper based technology for millimeter wave applications is developed.This process shows improved throughput and yield compared to traditional E-beam lithography based process. 0.15pro PHEMTs with high-aspect-ratio (≈4.5) gates are successfully fabricated using this process,exhibiting a good millimeter-wave performance with a fT of 82.7GHz and a power gain greater than 15dB at 12GHz.

作者: Shuai Wang Gang Lin TangSheng Chen

作者单位: National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing Electronic Devices Institute,210016

会议类型: 国际会议

会议名称: 2008 International Conference on Microwave and Millimeter Wave Technology(2008国际微波毫米波技术会议)

会议地点: 南京

会议语种:英文

页码: 159-162

在线出版日期: 2008-04-21（万方平台首次上网日期，不代表论文的发表时间）