Class E Power Amplifier Design with a Modified Load Network
A subclass Class E power amplifier is proposed inthis paper,and the new circuit topology and the basic principles are covered too. For simplicity,the theoretic results are directly given in a table compared to the typical Class E amplifiers performance. With the same resistance load,the output voltage is 24％ higher. The designed shunt capacitance is about 67％ more. With the same output power requirements,the voltage stress on device is about 20％ less. The validity and feasibility of the new modified Class E power amplifier are proved by a simulation and an experiment circuits. The design example uses an LDMOS transistor,MRF21010. The amplifiers power added efficiency (PAE) is 83.4％ and output power is 33dBm at 200MHz.
Fei You Songbai He Tao Cao Xiaohong Tang
School of Electronic Engineering University of Electronic Science and Technology of China
国际会议
2008 International Conference on Microwave and Millimeter Wave Technology(2008国际微波毫米波技术会议)
南京
英文
120-123
2008-04-21（万方平台首次上网日期，不代表论文的发表时间）