Improved Design and Characterization Method for Very High Speed Bipolar Circuits
An improved design method for high speed bipolar circuits is presented. It uses iso base-collector capacitance curves superposed to the duty cycles plots in the (Ic,Vce) plane. This new optimization way gives the optimum operating region for each transistor of a bipolar circuit to reach the best trade-off between the switching speed and the power consumption. Electrical design of emitter-coupled pair,which constitutes the basis of Emitter-Coupled Logic (ECL) circuits,is detailed to explain the design method. Each part of the measurement set-up is characterized in time and frequency domains to improve the measurement method. These improvements have enabled the design and characterization of InP double-heterojunction-bipolar transistormaster-slave D-type flip-flop circuits. 40Gb/s measurement withmore than 85 % eye-diagram opening validates this method.
Abed-Elhak Kasbari Achour Ouslimani Sylvain Blayac Agnieszka Konczykowska
国际会议
2008 Global Symposium on Millimeter Waves(GSMM 2008)(2008全球毫米波学术大会)
南京
英文
344-347
2008-04-21(万方平台首次上网日期,不代表论文的发表时间)