Two dimensional numerical simulation of temperature dependency of MOSFET out-put characteristics

摘要：

In this paper we present the impact of temperature on out-put MOSFET characteristics over a wide range of temperature from 300 °K to 500 °K,by using Femlab and　freefem+ tools. We have studied in particular current-voltage　characteristics (ID.VDS and ID-VGS),longitudinal electric field,and the variation of drain current with temperature. We have　observed a good agreement between the model of Femlab and　Freefem+tools. Two-dimensional numerical simulations are used　to describe significant physics phenomena in the characteristics　for 0.25 lain gate length NMOSFET transistor.

作者: Hamida.DJELTI Mohamed.FEHAM Achour.OUSLIMANI Abed-Elhak.KASBARI

作者单位: STIC Laboratory,Department of Telecommunications University of Tlemcen,BP 230,Chetouane,13000 Tlemce ECS-EA 3649,ENSEA 6 avenue de Ponceau 95014 Cergy-Pontoise,France

会议类型: 国际会议

会议名称: 2008 Global Symposium on Millimeter Waves(GSMM 2008)(2008全球毫米波学术大会)

会议地点: 南京

会议语种:英文

页码: 340-343

在线出版日期: 2008-04-21（万方平台首次上网日期，不代表论文的发表时间）