A 5.25GHz 0.35urn SiGe BiCMOS Power Amplifier for IEEE 802.11 a Wireless LAN

摘要：

A 5.25GHz linear power amplifier for Wireless LAN application has been realized in 0.35urn SiGe BiCMOS technology. This paper presents a two-stage power amplifier operating at AB mode under a single supply of+3.3v. A current mirror bias circuit is integrated to improve the linearity,efficiency,gain of the power amplifier. The result of simulation shows that the output 1 dB compression point (OPIdB) is 26.3dBm,the saturated output power achieves 28.5dBm,the power added efficiency (PAE) at OPIdB is about 20％,and the small signal gain is 28.3dB at 3.3v supply voltage.

关键词： power amplifier WLAN SiGe BICMOS PAE

作者: Xiao-Lin Wen-Yuan Li Zhi-Gong Wang

作者单位: Institute of RF- & OE-ICs,Southeast University,210096 Nanjing,China

会议类型: 国际会议

会议名称: 2008 Global Symposium on Millimeter Waves(GSMM 2008)(2008全球毫米波学术大会)

会议地点: 南京

会议语种:英文

页码: 310-313

在线出版日期: 2008-04-21（万方平台首次上网日期，不代表论文的发表时间）