Design of 60-GHz LNA in 0.13-μm SiGe BiCMOS

摘要：

This paper presents the design of the matching network of a 60-GHz high-gain LNA. Through analyzing commonly used structure,a simplified input matching network was designed and an inter-stage matching network was proposed to improve gain and reduce noise. Simulated in 0.13-μm SiGe BiCMOS technology,the LNA provides a gain of 20 dB with a noise figure of 5 dB while consuming 3 mA from a 2.5-V supply.

作者: Leijun XU Zhigong Wang Jun Xia Yan Zhao

作者单位: Institute of RF- & OE-Ics,Southeast University,Nanjing,210096,P.R.China;School of Electrical and Inf Institute of RF- & OE-ICs,Southeast University,Nanjing,210096,P.R.China

会议类型: 国际会议

会议名称: 2008 Global Symposium on Millimeter Waves(GSMM 2008)(2008全球毫米波学术大会)

会议地点: 南京

会议语种:英文

页码: 306-309

在线出版日期: 2008-04-21（万方平台首次上网日期，不代表论文的发表时间）