The RF Characteristics of the RF MEMS Switch as the Substrate Resistivity

摘要：

This paper presents the RF characteristics of the RF MEMS switch as the silicon substrate resistivity. The larger the resistivity of silicon substrate is,the larger the insertion loss of the RF MEMS switch is. When the RF MEMS switch is fabricated with the single crystalline silicon,the RF characteristics are changed by resistivity of silicon. It is necessary to study the change of RF characteristics as the substrate resistivity. The RF characteristics were simulated with different resistivity of silicon substrate. The RF MEMS switches were fabricated on each substrate with different resistivity. The RFMEMS switch was fabricated with the resistivity of 10 Ohm.cm,the insertion loss of that is about 0.2dB at 6GHz. And the RFMEMS switch was fabricated with the resistivity of 500 Ohm.cm,the insertion loss of that is about 0.6dB at 6GHz.

作者: S.Kang S.Park H.C.Kim K.Chun

作者单位: ISRC,School of Electrical Engineering and Computer Sciences,Seoul National University 301-1053(＃038) School of Electrical Engineering,University of Ulsan Mugeo 2-dong,Nam-gu,Ulsan,680-749,Korea

会议类型: 国际会议

会议名称: 2008 Global Symposium on Millimeter Waves(GSMM 2008)(2008全球毫米波学术大会)

会议地点: 南京

会议语种:英文

页码: 285-287

在线出版日期: 2008-04-21（万方平台首次上网日期，不代表论文的发表时间）