A 6-30 GHz Compact 3-bit Digital Attenuator MMIC using InP/InGaAs PIN Diodes

摘要：

A broadband (6-30 GHz) 3-bit digital attenuator MMIC using InP/lnGaAs PIN Diodes has been proposed and fabricated. The proposed digital attenuator is composed of Pi-resistive networks for non-reflective step attenuation and fabricated by using a benzocyclobutene(BCB)-based multi-layer MMIC technology. By using the lnP/InGaAs PIN diodes having a high cutoff frequency for digital switching,the proposed digital attenuator has shown the low insertion loss and excellent return loss characteristics. The 3-bit digital attenuator has a 3 dB attenuation step and a 21 dB attenuation range. The minimum insertion loss is 4 dB and the input/output return loss is greater than 10 dB over all attenuation states and frequencies. The chip size is 1.47×0.99 mm2.

作者: Hyunchul Eom Sejun Han Kyounghoon Yang

作者单位: Division of Electrical Engineering,School of Electrical Engineering and Computer Science (EECS),Korea Advanced Institute of Science and Technology (KAIST)373-1,Guseong-Dong,Yuseong-Gu,Daejeon,Republic of Korea

会议类型: 国际会议

会议名称: 2008 Global Symposium on Millimeter Waves(GSMM 2008)(2008全球毫米波学术大会)

会议地点: 南京

会议语种:英文

页码: 101-103

在线出版日期: 2008-04-21（万方平台首次上网日期，不代表论文的发表时间）