A Ka-Band Monolithic CPW-Mode T/R Modules Using 0.15 μm Gate-Length GaAs pHEMT Technology

摘要：

This paper presents the designs and measurement results of the monolithic coplanar wavegnide (CPW) Ka-band millimeter wave integrated circuits,including low noise amplifier,single-balance mixer,power amplifier,and oscillator. The millimeter wave ICs were fabricated with a 0.15 μm T-shape gate GaAs pseudomorphic HEMTs technology,carried out by commercially available foundry.The CPW process was applied in this work to avoid back-side process and various impedances can also be adjusted by line width and gap. Therefore,these sub-circuits can be integrated using CPW technology easily and no via-hole process was involved to reduce the process cost.

关键词： Millimeter wave GaAs Phemt CPW amplifier oscillator mixer

作者: Chia-Shih Cheng Chien-Cheng Wei Hsien-Chin Chiu Yi-Chyun Chiang Jeffrey S.Fu Chia-Song Wu

作者单位: Department of Electronic Engineering,Chang Gung University,Taoyuan,Taiwan TEL:[phone] Department of Electronic Engineering,Vanung University,Taoyuan,Taiwan TEL:[phone]

会议类型: 国际会议

会议名称: 2008 Global Symposium on Millimeter Waves(GSMM 2008)(2008全球毫米波学术大会)

会议地点: 南京

会议语种:英文

页码: 87-90

在线出版日期: 2008-04-21（万方平台首次上网日期，不代表论文的发表时间）