Comparison of Dot Schottky and MHEMT Diodes for 94 GHz Mixer Applications

摘要：

In this paper,we designed a dot type GaAs Sehottky diode for improvement of RF characteristics. The dot type GaAs Schottky diode shows that total resistance is 18.3 Ω,ideality factor is 1.41 at the room temperature and cut-off frequency is 435 GHz. The simulation result of designed single balanced mixer structure shows a good conversion loss of 6.28 dB.

作者: Seok Ho Bang Byoung-Chul Jun Dong Chul Park Sam-Dong Kim Jin Koo Rhee Sang Jin Lee Mun Kyo Lee Dong Sik Ko Sung-Woon Moon Yong Hyun Baek Min Han Seok Gyu Choi Tae Jong Baek

作者单位: Millimeter-wave INnovation Technology research center (MINT),Dongguk University,26,3-ga,Pil-dong,Jun Department of Radio Science and Engineering,Chungnam National University

会议类型: 国际会议

会议名称: 2008 Global Symposium on Millimeter Waves(GSMM 2008)(2008全球毫米波学术大会)

会议地点: 南京

会议语种:英文

页码: 52-55

在线出版日期: 2008-04-21（万方平台首次上网日期，不代表论文的发表时间）