Improvement of Fabrication Technology for InP Gunn Devices Using Trench Method

摘要：

We have fabricated InP Gunn diodes using the improved fabrication technology in order to eliminate the problems resulting from the fabrication procedure of InP Gunn diodes for operation at 94 GHz. We see that the developed fabrication procedure using the trench method reduces the stress in InP epi-layers during alloy,and therefore the cracks in epi-layers were reduced.

作者: M.R.Kim S.D.Lee J.S.Lee N.S.Kwak S.D.Kim J.K.Rhee

作者单位: Millimeter-wave INnovation Technology Research Center (MINT),Dongguk University 26,3-ga,Pil-dong,Jung-gu Seoul 100-715,Korea

会议类型: 国际会议

会议名称: 2008 Global Symposium on Millimeter Waves(GSMM 2008)(2008全球毫米波学术大会)

会议地点: 南京

会议语种:英文

页码: 21-24

在线出版日期: 2008-04-21（万方平台首次上网日期，不代表论文的发表时间）