Wet Chemical MESA Etching Using HCl-based and FeCl3 Light Sensitive Etchants for InP Gunn Diodes

摘要：

We have fabricated InP Gunn diodes with two different wet chemical etchants for MESA etching and compared the results. In order to make a comparative study,we have used two wet chemical etchants; one was HCI-based etchant (HCl :H3PO4 : H20 = 3 : 1 : 2),the other one was FeCl3 light sensitive etchant,it was shown that the fabricated diodes have the currents of 201 and 250 mA,and the breakdown voltage of below 8 V and over 11 V,respectively.

作者: Seong-Dae Lee Jae-Seo Lee No-Sung Kwak Mi-Ra Kim Sam-Dong Kim Jin-Koo Rhee

作者单位: Millimeter-wave INnovation Technology Research Center (MINT),Dongguk University 26,3-ga,Pil-dong,Jung-gu Seoul 100-715,Korea

会议类型: 国际会议

会议名称: 2008 Global Symposium on Millimeter Waves(GSMM 2008)(2008全球毫米波学术大会)

会议地点: 南京

会议语种:英文

页码: 17-20

在线出版日期: 2008-04-21（万方平台首次上网日期，不代表论文的发表时间）