Half Mode Substrate Integrated Waveguide Gunn Oscillator
Based on the Half Mode Substrate Integrated Waveguide (HMSIW) technology,a new type of Gunn Diode Oscillator was developed. Main emphasis was placed on HMSIW resonant cavity structure. Restrictions on the performance of the oscillators imposed by packaged networks and the self-characteristic of the Gunn diode transistor devices have been analyzed. This oscillators performance is characterized by medium level output power of 13.2dBm,phase noise less than -97.3 dBc/l-lz@100 kHz and frequency excursion 40MHz over temperature range from 10℃ to 75 ℃. It has some advantages such as planar integration,low cost,small size,good temperature-frequency stability,low phase noise.
half mode substrate integrated waveguide resonant cavity GUNN diode oscillator
Cuilin Zhong Jun Xu Zhiyuan Yu Maoyan Wang Yong Zhu
IEEE Conference Publishing School of Physical electronics,University of Electronic Science and Techn IEEE Conference Publishing School of Physical lectronics,University of Electronic Science and Techno
国际会议
2008 Global Symposium on Millimeter Waves(GSMM 2008)(2008全球毫米波学术大会)
南京
英文
14-16
2008-04-21（万方平台首次上网日期，不代表论文的发表时间）