Two-Stage 94 GHz drive Amplifiers Using 0.1-μm Metamorphic HEMT Technology

摘要：

In this paper,mUlimeter-wave 94 GHz drive amplifiers based on metamorphic high electron mobility transistors (MHEMTs) were designed and fabricated. The fabricated 100 nm gate length MHEMT devices exhibit DC characteristics with a drain current density of 690 mA/mm and an extrinsic transeonductance of 770mS/mm. The current gain cutoff frequency (fT) and the maximum oscillation frequency (fmax) are 185 GHz and 230 GHz,respectively. The matching circuit of amplifier was designed using CPW (coplanar wave-guide) transmission line. The fabricated amplifier shows a good S21 gain of 7.79 dB,an input return loss (S11) of -16.5 dB and an output return loss (S22) of-15.9 dB.

作者: Min Han Sam-Dong Kim Jin Koo Rhee Sung-Woon Moon Jung-hun Oh Byeong-Ok Lim Tae-Jong Baek Seok-Gyu Choi Young-Hyun Baek Yeon-Sik Chae Hyun-Chang Park

作者单位: IEEE Conference Publishing Millimeter-wave Innovation Technology research center (MINT),Dongguk University 3-26 Pil-dong,Jung-gu,Seoul 100-715,Korea

会议类型: 国际会议

会议名称: 2008 Global Symposium on Millimeter Waves(GSMM 2008)(2008全球毫米波学术大会)

会议地点: 南京

会议语种:英文

页码: 10-13

在线出版日期: 2008-04-21（万方平台首次上网日期，不代表论文的发表时间）