ATOMISTIC SIMULATIONS OF STRUCTURAL RELAXATION PROCESS IN AMORPHOUS SILICON CARBIDE

摘要：

In order to elucidate the structural relaxation of a-SiC,we performed molecular dynamics simulation of the annealing process in a-SiC with different quench rates.The microstructures before and after annealing were examined and compared,in terms of both chemical and topological order.Our results revealed that chemical order was distinctively improved,along with some considerable modification occurred in the topological order,within both short range and medium range.A strong correlation between chemical and topological order was clarified.

关键词： Silicon Carbide Amorphous Structural relaxation Annealing rates

作者: K.Xue L.S.Niu H.J.Shi M.Na(I)t Abdllaziz

作者单位: School of Aerospace,FML,Department of Engineering Mechanics,Tsinghua University,Beijing 100084,China Abdilaziz,Directeur de la Recherche PolytechLille,France

会议类型: 国际会议

会议名称: 第二届国际非均质材料力学会议(The Second International Conference on Heterogeneous Material Mechanics)

会议地点: 安徽黄山

会议语种:英文

页码: 1498-1501

在线出版日期: 2008-06-03（万方平台首次上网日期，不代表论文的发表时间）