Analysis and Simulation of Feedback Capacitance Effect in Class-E Power Amplifiers

摘要：

In this paper,the effect of feedback capacitance (gate-to-drain capacitance Cgd) on the output current of Class-E power amplifiers (PAs) is analyzed,with finite choke inductance and zero switched-on resistance. An analytical method is utilized to describe the performance of the feedback capacitance during the overall operation duties. The method expresses the effect clearly. To verify the validity of our theory,computer simulation based on the GaAs FET FLC301XP model is presented. The effect of gate-to-drain capacitance is simulated on a wide range at microwave frequency. The results show a good agreement with our theoretical analysis.

关键词： Class-E power amplifier feedback capacitance

作者: Zhongyu Liao Xiaowei Zhu

作者单位: State Key Lab of Millimeter Waves College of Information Science and Engineering Southeast University Nanjing,210096,China

会议类型: 国际会议

会议名称: 2008 International Conference on Microwave and Millimeter Wave Technology(2008国际微波毫米波技术会议)

会议地点: 南京

会议语种:英文

页码: 1495-1498

在线出版日期: 2008-04-21（万方平台首次上网日期，不代表论文的发表时间）