Effects of Pulse Repetition Frequency on the Immunity of Silicon BJT against Microwave Interference

摘要：

The microwave pulse interference may cause permanent damage to silicon bipolar junction transistor (BJT).The effects of pulse repetition frequency (PRF),one of the important parameters of microwave interferences,are studiedInthis paper.A theoretical model is proposed,on the basis of which an approximate formula is presented for typical low-power silicon BJT.A prediction made by the proposed formula concludes that,as PRF does not exceed several kHz,it has no obvious influence.

作者: CHEN Xi DU Zhengwei GONG Ke

作者单位: State Key Laboratory on Microwave and Digital Communications,Department of Electronic Engineering,Tsinghua University Beijing 100084,China

会议类型: 国际会议

会议名称: 2008 International Conference on Microwave and Millimeter Wave Technology(2008国际微波毫米波技术会议)

会议地点: 南京

会议语种:英文

页码: 488-490

在线出版日期: 2008-04-21（万方平台首次上网日期，不代表论文的发表时间）