Preparation of ITO Films by Sol-Gel Method with Different Concentration of In3+
(0) The sols with different concentration of In3+ were prepared by dissolving different mass of In(NO)3.4.5H2O in acetylacetone separately and adding SnCl4.5H2O with the mol proportion of In:Sn to 10:1,and then 1-10-layers ITO films were fabricated by dip-coating technique with quartz glasses as substrates;the 1-10-layer films were annealed at 500℃ for 1 hour after each dip-coating in air atmosphere.The morphological,structural,electrical and optical properties were investigated.The XRD results indicate that all the ITO films were polycrystalline with a cubic bixbyite structure;the variation of indium content in the sol can affect both the structure and properties of ITO films;the sheet resistance and transmittance decrease obviously with the increase of In3+ concentration within 5 layers,and the optimum In3+ concentration is 0.5238 mol/l for which the sheet resistance is relatively low and the transmittance is above 85％ in the visible range.
ITO film Sol-gel Concentration of In3+ Sheet resistance Transmittance
Jie Liu Bin Yang Guo-dong Yang
Key Laboratory of Advanced Textile Materials and Manufacturing Technology (ZhejiangSci-Tech Universi Key Laboratory of Advanced Textile Materials and Manufacturing Technology (Zhejiang Sci-Tech Univers Shandong Industrial Technician College,Weifang 261053,China
国际会议
杭州
英文
2008-10-15（万方平台首次上网日期，不代表论文的发表时间）