Effect of Processing Parameters on the Property of NiZn Ferrite Thin Films Deposited by Radio Frequency Magnetron Sputtering Technique
Ni0.5Zn0.5Fe2O4 ferrite thin films were prepared on single-crystal Si (100) substrate by radio frequency (RF) magnetron sputtering technique. The structure and magnetic properties of the deposited films are investigated as a function of RF power and working argon gas pressure. XRD patterns reveal that an obviously preferential (400) orientation appears in the films deposited at different sputtering power, and the preferential orientation changes from (400) to (311) at different sputtering Ar pressure, which is caused by the change of films growth mechanism from migration to accumulation. Other results such as saturation magnetization (Ms),coercivity (He), mean grain size, as well as surface roughness (RMS), are also discussed in this paper, which imply that as-deposited films defects and stress are dominantly responsible for films properties.
NiZn ferrite thin film radio frequency (RF) magnetron sputtering sputtering power sputtering pressure magnetic properties preferential orientation
X.N.Zhao Z.W.Lan K.Sun Z.Yu J.M.Huang
State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,Sichuan,China
国际会议
The 10th International Conference on Ferrites(2008中国国际铁氧体研讨会)
成都
英文
71-75
2008-10-10（万方平台首次上网日期，不代表论文的发表时间）