The Preservation Time of Rapid Thermal Annealing Effect on the Loss of Bi:YIG Film in Terahertz Regime

摘要：

The Bi:YIG target was sintered at 950℃ for 3 h after molding wafer with diameter of 110 mm and thickness of 5 mm. The film was deposited by radio frequency rnagnetron sputtering method in the JGP-500 and crystallized by rapid thermal annealing in the AG4100. Temperature rapidly reach 700℃ with a relatively high rate (30℃/s), preserve heat at 20s, 90s, 00s and 600s respectively. Those samples measured by Terahertz Time Domain Spectroscopy, the results shows that the least loss sample is that preservation time is 300s. The result shows that the preservation heat time play an important role in the loss of Bi:YIG film in terahertz regime.

关键词： Bi:YIG terahertz time domain spectroscopy thermal annealing loss

作者: S.Li H.W.Zhang J.Shen Q.H.Yang L.Peng Q.Y.Wen W.W.Ling

作者单位: State Key Laboratory of Electronic Thin Film and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,Sichuan,China

会议类型: 国际会议

会议名称: The 10th International Conference on Ferrites(2008中国国际铁氧体研讨会)

会议地点: 成都

会议语种:英文

页码: 65-67

在线出版日期: 2008-10-10（万方平台首次上网日期，不代表论文的发表时间）