EXPERIMENTAL STUDY OF SEMI-INSULATING GAAS PHOTOCONDUCTIVE SEMICONDUCTOR SWITCH

摘要：

A single photoconductive semiconductor switch with electrode gap of 18mm was fabricated from semiinsulating GaAs, of which the most notable defect was EL2. Photoconductivity tests were performed using 1064nm wavelength laser pulse. The PCSS began to work in the nonlinear mode at 10kV with the laser energy of 10.6mJ. The highest photocurrent tested for 11.4mJ optical excitation at the bias voltage of 20.5kV was ～2kA.A resistance of 20.7Ω was in series with the PCSS to limit the loop current because the max current Rogowski coil can measure was 2kA. Hold-off voltage tests were performed. The PCSS failed at a bias voltage of 32kV because of surface flashover.

作者: Jianqiang Yuan Hongwei Liu Jinfeng Liu Weiping Xie Hongtao Li Xinxin Wang

作者单位: Department of Electrical Engineering,Tsinghua University,Beijing 100084,China;Institute of Fluid Phy Institute of Fluid Physics,CAEP,P.O.Box 919-108,Mianyang 621900,China Department of Electrical Engineering,Tsinghua University,Beijing 100084,China

会议类型: 国际会议

会议名称: 17th International Conference on High-Power Particle Beams(第17届高功率离子束国际会议)

会议地点: 西安

会议语种:英文

页码: 478-480

在线出版日期: 2008-07-06（万方平台首次上网日期，不代表论文的发表时间）