THE INFLUENCE OF HIGH NEGATIVE SUBSTRATE PULSE BIAS ON BULK PLASMA DENSITY
The characteristics of sheaths are important issues to plasma immersion ion implantation and deposition(PIIID), since PIIID takes advantage of the sheath on the substrate to accelerate ions implanting towards the substrate with high substrate bias. Many complicated simulation models as well as comprehensive interpretations have been established to describe the characteristics of sheaths formed by PIIID. In most of the simulations, the bulk plasma density is recorded without substrate bias applied and treated as a constant after the bias tums on, since the bulk plasma attracts minor attentions compared with the complex sheath in these simulations. However, as a matter of fact, the variance of bulk plasma density is much greater than expected, influencing the accuracy of the simulations,especially for those small-chamber PIIID instruments designed for modifications of microelectronic materials.In this paper, the deviance of the bulk plasma density has been observed, the influence of several input parameters has been researched and the reasons of corresponding variance have been discussed.
Shuyu Zhang Xu Xu Rongqing Liang Kefu Liu
Institute of Modem Physics,Fudan University,Shanghai 200433,China Department of Illuminating Engineering & Light Sources,Fudan University,Shanghai 200433,China
国际会议
17th International Conference on High-Power Particle Beams(第17届高功率离子束国际会议)
西安
英文
408-411
2008-07-06（万方平台首次上网日期，不代表论文的发表时间）