Application of Ion Beam and Electron Beam by Plasma Focus Device to Material Processing

摘要：

Silicon carbide (SiC) films were grown on the silicon (100) substrate by a 20 kJ Mather-type dense plasma focus device. The preparation method and characteriza-tion data are presented. X-ray diffractometer (XRD), Fourier transform infrared spectroscopy (FTIR), field-emission scanning electron microscopy (SEM) and nano-indentor were employed for the characterization of the samples obtained at different axial position of 50mm, 90mm, 130mm and 170mm, respectively. Polycrystalline 3C-SiC were obtained at the position of 90mm and 130mm. SEM image showed that the silicon carbide films obtained at the position of 90 mm are porous on surface layer. Nano-indentor indicates that the film obtained at the position of 130mm has the highest mechanical hardness.

作者: Z.P.Wang H.R.Yousefi Y.Nishino H.Ito K.Masugata

作者单位: Department of Electric and Electronic system Engineering,University of Toyama,3190 Gofuku,Toyama 930-8555,Japan

会议类型: 国际会议

会议名称: 17th International Conference on High-Power Particle Beams(第17届高功率离子束国际会议)

会议地点: 西安

会议语种:英文

页码: 323-326

在线出版日期: 2008-07-06（万方平台首次上网日期，不代表论文的发表时间）