LASER GENERATION IN SEMICONDUCTORS DUE TO HIGH-CURRENT PICOSECOND ELECTRON BEAMS

摘要：

Laser generation peculiarities in different semiconductor materials (A2B6 compositions) under the action of high-current picosecond electron beams were investigated. Current density on the sample could exceed 800 A/cm2. Current pulses shorter than 300 ps FWHM were of special interest. The estimation of the current threshold densities that cause laser generation under such short pulses was given. Laser generation (line widths ~ 7-10 nm) in visible range on different samples (ZnSe, ZnCdS, CdS, CdS-CdSe) was obtained. The maximum pulse power of laser radiation exceeded 1000 W.

作者: Anna Reutova Sergey Shunaylov Michael Yalandin Valery Shpak Konstantin Bereznoy Alexander Nasibov Petr Shapkin

作者单位: Institute of Electrophysics UB RAS,620016,106,Amundsen Street,Ekaterinburg,Russia Lebedev Physical Institute of Russian Academy of Sciences,Moscow,119991

会议类型: 国际会议

会议名称: 17th International Conference on High-Power Particle Beams(第17届高功率离子束国际会议)

会议地点: 西安

会议语种:英文

页码: 254-257

在线出版日期: 2008-07-06（万方平台首次上网日期，不代表论文的发表时间）