Formation of Nanosized Particles of Silicon Carbide and Diamonds in Surface Layer of Silicon Target during Short-Pulsed Implantation of Carbon Ions
In the paper the study results of silicon carbide and diamond nanosized particle synthesis during short-pulsed implantation of carbon ions and protons into the silicon target are presented. The experiments have been performed at the source of high-power pulsed ion beams TEMP based on the magnetically isolated diode with Br field. The beam parameters are the following: ion energy is 300 keV, pulse duration is 80 ns, beam contains ions of carbon and protons, ion current density is 30 A/cm2. The plates of monocrystal silicon were used as target. After consequent action of more than 100 pulses the formation of nanosized particles SiC and nanodiamonds were observed in the surface layer of silicon. The average sizes of coherent scattering area of SiC particles and nanodiamonds were 12-16 and 8-9 nm,correspondently.
G.E.Remnev Yu.F.Ivanov E.P.Naiden M.S.Saltymakov A.V.Stepanov V.F.Shtanko
High-Voltage Research Institute at Tomsk Polytechnic University,2a Lenin Ave.,Tomsk,634028,Russia High-Current Electronics Institute of Russian Academy of Sciences,2/3 Academicheskiy ave.,Tomsk,6340 Siberian Physic-Technique Institute at Tomsk State University,1 Novosobornaya Square,Tomsk,634050,Ru Tomsk Polytechnic University,30 Lenin Ave.,Tomsk,634050,Russia
国际会议
17th International Conference on High-Power Particle Beams(第17届高功率离子束国际会议)
西安
英文
215-217
2008-07-06（万方平台首次上网日期，不代表论文的发表时间）