An Analysis of Flash Memory Programming Methods Using JTAG Port

摘要：

The non-volatile flash memories are widely used on embedded systems because the memories are superior to EEPROM in respect to cost, density, and usage. The flash memory programming methods for ARM-based systems are categorized as direct scan-chain driving and ARM debugging architecture methods. This paper has investigated the existing flash memory programming methods and established two expressions that estimate flash memory programming times. Also, we suggested the enhanced flash memory programming methods after the detailed investigation of the ARM debugging architecture. Experiments on the flash memory programming methods show that the enhanced methods are superior to the existing methods. And some suggestions are given for further improvement of flash memory programming.

作者: Sang-Young Cho Yoojin Chung

作者单位: Computer Science & Information Communications Engineering Division Hankuk University of Foreign Studies, Yongin, Kyeonggi-do, Korea

会议类型: 国际会议

会议名称: The 5th Asian Symposium on Geographic Information Systems from Computer Science & Engineering View(ASGIS 2007)(第五届亚洲地理信息系统国际学术研讨会)

会议地点: 重庆

会议语种:英文

页码: 262-265

在线出版日期: 2007-04-24（万方平台首次上网日期，不代表论文的发表时间）