Slow highly charged ion O4+ induced electron emission from clean solid surfaces
The total electron emission yields following the interaction of slow highly charged ions (SHCI) O4+with different material surfaces (W,Au,Si and SiO2) have been measured.It is found that the electron emission yield γ increases proportionally with the projectile velocity υ ranging from 5.36 × 105m/s to 10.7 × 105m/s.The total emission yield is dependent on the target materials,and it turns out to follow the relationship γ(Au) > γ(Si) > γ(W).The result shows that the electron emission yields are mainly determined by the electron stopping power of the target when the projectile potential energy is taken as a constant,which is in good agreement with the former studies.
Slow highly charged ion (SHCI) electron emission electron stopping power
XU Zhong-Feng(徐忠锋) ZHAO Yong-Wao(赵永涛) WANG Yu-Yu(王瑜玉) ZHAO Di(赵迪) WANG Jian-Guo(王建国) LI De-Hui(李德慧) Qayyum Abdul LI Fu-Li(李福利) XIAO Guo-Qing(肖国青)
Institute of Modern Physics,Chinese Academy of Science,Lanzhou 730000,China;Department of Applied Ph Institute of Modern Physics,Chinese Academy of Science,Lanzhou 730000,China Department of Applied Physics,Xian Jiaotong University,Xian 710049,China Physics Division,Pakistan Institute of Nuclear Science and Technology,Islamabad 44000,Pakistan
国际会议
The 13th National Nuclear Physics Conference of China(第十三届全国核物理大会暨第八届会员代表大会)
兰州
英文
247-250
2007-08-22(万方平台首次上网日期,不代表论文的发表时间)